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Power Transistors
2SC3944, 2SC3944A
Silicon NPN epitaxial planar type
For low-frequency driver and high power amplification Complementary to 2SA1535 and 2SA1535A Features
* Excellent collector current IC characteristics of forward current transfer ratio hFE * High transition frequency fT * A complementary pair with 2SA1535 and 2SA1535A, is optimum for the driver stage of a 60 W to 100 W output amplifier * Full-pack package which can be installed to the heat sink with one screw
16.70.3
Unit: mm
0.70.1
10.00.2 5.50.2
4.20.2
4.20.2 2.70.2
7.50.2
3.10.1
Solder Dip (4.0)
1.40.1
1.30.2 0.5+0.2 -0.1
14.00.5
0.80.1
Absolute Maximum Ratings Ta = 25C
Parameter Collector-base voltage (Emitter open) 2SC3944 2SC3944A VCEO VEBO IC ICP TC = 25C PC Tj Tstg Symbol VCBO Rating 150 180 150 180 5 1 1.5 15 2.0 150 -55 to +150 C C V A A W V Unit V
2.540.3 5.080.5
123
Collector-emitter voltage 2SC3944 (Base open) 2SC3944A Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature
1: Base 2: Collector 3: Emitter EIAJ: SC-67 TO-220F-A1 Package
Electrical Characteristics Ta = 25C 3C
Parameter Collector-emitter voltage (Base open) 2SC3944 2SC3944A VEBO ICBO hFE1 * hFE2 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) VCE(sat) VBE(sat) fT Cob IE = 10 A, IC = 0 VCB = 150 V, IE = 0 VCB = 180 V, IE = 0 VCE = 10 V, IC = 150 mA VCE = 5 V, IC = 500 mA IC = 500 mA, IB = 50 mA IC = 500 mA, IB = 50 mA VCE = 10 V, IC = 50 mA, f = 10 MHz VCB = 10 V, IE = 0, f = 1 MHz 65 50 160 100 0.5 1.0 200 30 50 2.0 2.0 V V MHz pF Symbol VCEO Conditions IC = 1 mA, IB = 0 Min 150 180 5 10 10 330 V A Typ Max Unit V
Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) 2SC3944 2SC3944A
Forward current transfer ratio
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE1
Publication date: January 2003
P 65 to 110
Q 90 to 155
R 130 to 220
SJD00117BED
S 185 to 330
1
2SC3944, 2SC3944A
PC Ta
Collector-emitter saturation voltage VCE(sat) (V)
25
(1) TC=Ta (2) Without heat sink (PC=2W)
VCE(sat) IC
10
VBE(sat) IC
10
20
Base-emitter saturation voltage VBE(sat) (V)
IC/IB=10
IC/IB=10
Collector power dissipation PC (W)
(1)
1
1
TC=-25C 100C 25C
15
10
TC=100C
0.1
25C
0.1
5
(2)
-25C
0
0
40
80
120
160
0.01 0.01
0.1
1
0.01 0.01
0.1
1
Ambient temperature Ta (C)
Collector current IC (A)
Collector current IC (A)
hFE IC
1 000
VCE=10V
fT I E
Collector output capacitance C (pF) (Common base, input open circuited) ob
400
VCB=10V f=10MHz TC=25C
Cob VCB
100
IE=0 f=1MHz TC=25C
Forward current transfer ratio hFE
TC=100C
Transition frequency fT (MHz)
25C
80
300
100
-25C
60
200
40
10
100
20
1 0.01
0.1
1
0 -0.01
-0.1
-1
0
1
10
100
Collector current IC (A)
Emitter current IE (A)
Collector-base voltage VCB (V)
Safe operation area
10
Single pulse TC=25C ICP
Collector current IC (A)
1
IC
t=<50s DC t=10ms
0.1
t=1ms
0.01
2SC3944A 2SC3944
0.001
1
10
100
1 000
Collector-emitter voltage VCE (V)
2
SJD00117BED
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL
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